On the effect of noise and electronics bandwidth on a stochastic-resonance memory device

Fierens, Pablo Ignacio; Patterson, Germán; Bellomo, Guido; Grosz, Diego

ponencia en congreso.page.titleprefix
On the effect of noise and electronics bandwidth on a stochastic-resonance memory device

dc.contributor.author	Fierens, Pablo Ignacio
dc.contributor.author	Patterson, Germán
dc.contributor.author	Bellomo, Guido
dc.contributor.author	Grosz, Diego
dc.date.accessioned	2017-04-19T14:11:49Z
dc.date.available	2017-04-19T14:11:49Z
dc.date.issued	2011
dc.description.abstract	"We recently showed that a ring of two bistable oscillators is capable of storing a single bit of information via stochastic resonance. Memory performance was characterized in terms of the probability of erroneous bit detection and was shown to be minimized for a range of noise intensities. Furthermore, memory persistence was also shown to exhibit a stochastic-resonance behavior. In this paper we investigate the inﬂuence on memory performance, in particular its resilience to noise, on both noise bandwidth and the limited time response of the bistable elements. We show that, for broad ranges of ST and noise bandwidths, the probability of erroneous bit retrieval is also minimized for an optimal noise intensity, exhibiting a deep well as a function of noise intensity. We are interested in the breadth of such a well as it points out to the robustness of the memory device under different working conditions. Moreover, we show that there exists a relation between the noise and ST bandwidths that favors wide wells. We believe that this relation may be of relevance as a design rule for practical memory devices sustained by noise."	en
dc.identifier.issn	0094-243X
dc.identifier.uri	http://ri.itba.edu.ar/handle/123456789/499
dc.language.iso	en	en
dc.relation	info:eu-repo/semantics/altIdentifier/doi/10.1063/1.3574866
dc.relation	info:eu-repo/grantAgreement/ANPCYT/PICTO/31176/AR. Ciudad Autónoma de Buenos Aires
dc.subject	RESONANCIA ESTOCASTICA	es
dc.subject	DISPOSITIVOS DE MEMORIA	es
dc.subject	RUIDO	es
dc.title	On the effect of noise and electronics bandwidth on a stochastic-resonance memory device	en
dc.type	Ponencias en Congresos	es
dc.type	info:eu-repo/semantics/acceptedVersion
dspace.entity.type	Ponencia en Congreso
itba.description.filiation	Fil: Fierens, Pablo Ignacio. Instituto Tecnológico de Buenos Aires; Argentina.
itba.description.filiation	Fil: Fierens, Pablo Ignacio. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina.
itba.description.filiation	Fil: Patterson, Germán. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina.
itba.description.filiation	Fil: Bellomo, Guido. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina.
itba.description.filiation	Fil: Grosz, Diego. Instituto Tecnológico de Buenos Aires; Argentina.
itba.description.filiation	Fil: Grosz, Diego. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina.
itba.description.filiation	Fil: Grosz, Diego. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales; Argentina.