ponencia en congreso.page.titleprefix
Voltage-driven hysteresis model for resistive switching: SPICE modeling and circuit applications

dc.contributor.authorPatterson, Germán
dc.contributor.authorSuñé, Jordi
dc.contributor.authorMiranda, Enrique
dc.date.accessioned2019-08-21T16:41:19Z
dc.date.available2019-08-21T16:41:19Z
dc.date.issued2017-12
dc.description.abstract"Resistive switching devices are nonlinear electrical components that have drawn great attention in the design of new technologies including memory devices and neuromorphic circuits. In this paper, an SPICE implementation of a novel compact model is presented and put under test by means of different circuit configurations. The model is based on two identical opposite-biased diodes in series with a resistor where the switching behavior is governed by the creation and rupture of multiple conductive channels. Results show that the model is stable under different input sources and amplitudes and, with special interest, in multielement circuits. The model is validated with experimental data available in the literature. Both the corresponding SPICE code and schematic are provided in order to facilitate the model use and assessment."en
dc.identifier.issn0278-0070
dc.identifier.urihttp://ri.itba.edu.ar/handle/123456789/1727
dc.language.isoenen
dc.relationinfo:eu-repo/semantics/altIdentifier/doi/10.1109/TCAD.2017.2756561
dc.relationinfo:eu-repo/grantAgreement/MINECO/FEDER/PCIN2013-076/ES. Madrid/PANACHE
dc.relationinfo:eu-repo/grantAgreement/ENIAC JU/TEC2012-32305/BE. Bruselas
dc.relationinfo:eu-repo/grantAgreement/DURSI/2014SGR384/ES. Cataluña
dc.subjectMODELOS MATEMATICOSes
dc.subjectHISTERESISes
dc.subjectCONMUTACIONes
dc.subjectSIMULACIONes
dc.subjectSPICEes
dc.subjectMEMRISTORSes
dc.subjectCIRCUITOS NEUROMORFICOSes
dc.titleVoltage-driven hysteresis model for resistive switching: SPICE modeling and circuit applicationsen
dc.typePonencias en Congresoses
dc.typeinfo:eu-repo/semantics/acceptedVersion
dspace.entity.typePonencia en Congreso
itba.description.filiationFil: Patterson, Germán. Universitat Autònoma de Barcelona; España.
itba.description.filiationFil: Patterson, Germán. Instituto Tecnológico de Buenos Aires; Argentina.
itba.description.filiationFil: Suñé, Jordi. Universitat Autònoma de Barcelona; España.
itba.description.filiationFil: Miranda, Enrique. Universitat Autònoma de Barcelona; España.

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