DSpace Repository :: Browsing by Subject "MEMRISTORS"

Browsing by Subject "MEMRISTORS"

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Mimicking spike-timing-dependent plasticity with emulated memristors
(2019-05-07) Cisternas Ferri, Agustín; Rapoport, Alan; Fierens, Pablo Ignacio; Patterson, Germán
"Memristors have found application in neuromorphic circuits and it has been shown that, under certain conditions, they may mimic the behavior of neuronal synapses. Experimenting with memristor-based synapses has several problems. Indeed, memristor samples are difficult to obtain and tweaking their parameters to adapt their behavior requires a long fabrication and testing process. For this reason, simulation and emulation become attractive alternatives for the study of memristive systems. We postulate that emulation has the advantage of working with real-world circuits and not stylized simulation models. In this paper, we propose a basic memristor emulation architecture and show that it can be used to mimic certain characteristics of synapses."
Noise on resistive switching: a Fokker–Planck approach
(2016-05) Patterson, Germán; Grosz, Diego; Fierens, Pablo Ignacio
"We study the effect of internal and external noise on the phenomenon of resistive switching. We consider a non-harmonic external driving signal and provide a theoretical framework to explain the observed behavior in terms of the related Fokker–Planck equations. It is found that internal noise causes an enhancement of the resistive contrast and that noise proves to be advantageous when considering short driving pulses. In the case of external noise, however, noise only has the effect of degrading the resistive contrast. Furthermore, we find a relationship between the noise amplitude and the driving signal pulse width that constrains the persistence of the resistive state. In particular, results suggest that strong and short driving pulses favor a longer persistence time, an observation that may find applications in the field of high-integration high-speed resistive memory devices."
On the application of a diffusive memristor compact model to neuromorphic circuits
(2019) Cisternas Ferri, Agustín; Rapoport, Alan; Fierens, Pablo Ignacio; Patterson, Germán; Miranda, Enrique; Suñé, Jordi
"Memristive devices have found application in both random access memory and neuromorphic circuits. In particular, it is known that their behavior resembles that of neuronal synapses. However, it is not simple to come by samples of memristors and adjusting their parameters to change their response requires a laborious fabrication process. Moreover, sample to sample variability makes experimentation with memristor-based synapses even harder. The usual alternatives are to either simulate or emulate the memristive systems under study. Both methodologies require the use of accurate modeling equations. In this paper, we present a diffusive compact model of memristive behavior that has already been experimentally validated. Furthermore, we implement an emulation architecture that enables us to freely explore the synapse-like characteristics of memristors. The main advantage of emulation over simulation is that the former allows us to work with real-world circuits. Our results can give some insight into the desirable characteristics of the memristors for neuromorphic applications."
Thermal effects on the switching kinetics of silver/manganite memristive systems
(2014-10) Stoliar, Pablo; Sánchez, M. J.; Patterson, Germán; Fierens, Pablo Ignacio
"We investigate the switching kinetics of oxygen vacancy (Ov) diffusion in La(5/8-y)Pr(y) Ca(3/8)MnO(3)-Ag (LPCMO–Ag) memristive interfaces by performing experiments on the temperature dependence of the high resistance state under thermal cycling. Experimental results are well reproduced by numerical simulations based on thermally activated Ov diffusion processes and fundamental assumptions relying on a recent model proposed to explain bipolar resistive switching in manganite-based cells. The confident values obtained for activation energies and the diffusion coefficient associated to Ov dynamics constitute a validation test for both model predictions and Ov diffusion mechanisms in memristive interfaces."
Voltage-driven hysteresis model for resistive switching: SPICE modeling and circuit applications
(2017-12) Patterson, Germán; Suñé, Jordi; Miranda, Enrique
"Resistive switching devices are nonlinear electrical components that have drawn great attention in the design of new technologies including memory devices and neuromorphic circuits. In this paper, an SPICE implementation of a novel compact model is presented and put under test by means of different circuit configurations. The model is based on two identical opposite-biased diodes in series with a resistor where the switching behavior is governed by the creation and rupture of multiple conductive channels. Results show that the model is stable under different input sources and amplitudes and, with special interest, in multielement circuits. The model is validated with experimental data available in the literature. Both the corresponding SPICE code and schematic are provided in order to facilitate the model use and assessment."

Browsing by Subject "MEMRISTORS"

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