Examinando por Materia "RESONANCIA ESTOCASTICA"
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Artículo de Publicación PeriódicaOn the dynamics of a single-bit stochastic-resonance memory device(2010-07) Ibáñez, Santiago Agustín; Fierens, Pablo Ignacio; Perazzo, Roberto P. J.; Patterson, Germán; Grosz, Diego"The increasing capacity of modern computers, driven by Moore’s Law, is accompanied by smaller noise margins and higher error rates. In this paper we propose a memory device, consisting of a ring of two identical overdamped bistable forward-coupled oscillators, which may serve as a building block in a larger scale solution to this problem. We show that such a system is capable of storing a single bit and its performance improves with the addition of noise. The proposed device can be regarded as asynchronous, in the sense that stored information can be retrieved at any time and, after a certain synchronization time, the probability of erroneous retrieval does not depend on which oscillator is being interrogated. We characterize memory persistence time and show it to be maximized for the same noise range that both minimizes the probability of error and ensures synchronization. We also present experimental results for a hard-wired version of the proposed memory, consisting of a loop of two Schmitt triggers. We show that this device is capable of storing a single bit and does so more efficiently in the presence of noise." Ponencia en CongresoOn the effect of noise and electronics bandwidth on a stochastic-resonance memory device(2011) Fierens, Pablo Ignacio; Patterson, Germán; Bellomo, Guido; Grosz, Diego"We recently showed that a ring of two bistable oscillators is capable of storing a single bit of information via stochastic resonance. Memory performance was characterized in terms of the probability of erroneous bit detection and was shown to be minimized for a range of noise intensities. Furthermore, memory persistence was also shown to exhibit a stochastic-resonance behavior. In this paper we investigate the inﬂuence on memory performance, in particular its resilience to noise, on both noise bandwidth and the limited time response of the bistable elements. We show that, for broad ranges of ST and noise bandwidths, the probability of erroneous bit retrieval is also minimized for an optimal noise intensity, exhibiting a deep well as a function of noise intensity. We are interested in the breadth of such a well as it points out to the robustness of the memory device under different working conditions. Moreover, we show that there exists a relation between the noise and ST bandwidths that favors wide wells. We believe that this relation may be of relevance as a design rule for practical memory devices sustained by noise."